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    • IKWH100N65EH7XKSA1

      Manufacturer No:IKWH100N65EH7XKSA1

      Manufacturer:Infineon

      Type:IGBT Transistors

      Description:IGBT Transistors

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Infineon
    Product Category: IGBT Transistors
    RoHS:  Details
    Technology: Si
    Package / Case: TO-247-3
    Mounting Style: Through Hole
    Configuration: Single
    Collector- Emitter Voltage VCEO Max: 650 V
    Collector-Emitter Saturation Voltage: 1.6 V
    Maximum Gate Emitter Voltage: - 20 V 20 V
    Continuous Collector Current at 25 C: 140 A
    Pd - Power Dissipation: 427 W
    Minimum Operating Temperature: - 40 C
    Maximum Operating Temperature: + 175 C
    Packaging: Tube
    Brand: Infineon Technologies
    Gate-Emitter Leakage Current: 100 nA
    Product Type: IGBT Transistors
    other: 240
    Subcategory: IGBTs
    Part # Aliases: IKWH100N65EH7 SP005588824

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