SIHB080N60E-GE3

Manufacturer No:SIHB080N60E-GE3

Manufacturer:Vishay

Type:MOSFET

Description:MOSFET E Series Power MOSFET 80mO 10V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-263-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 30 V + 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	63 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	227 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay Semiconductors
Fall Time:	31 ns
Forward Transconductance - Min:	4.6 S
Product Type:	MOSFET
Rise Time:	96 ns
other:	1000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	31 ns