SQJ186ELP-T1_GE3

Manufacturer No:SQJ186ELP-T1_GE3

Manufacturer:Vishay

Type:MOSFET

Description:MOSFET Automotive N-Channel 80V D-S 175C MOSFET PowerPAK SO-8L BWL 12.5 mO 10V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	21 A
Rds On - Drain-Source Resistance:	125 mOhms
Vgs - Gate-Source Voltage:	- 30 V + 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	45 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	132 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Vishay Semiconductors
Fall Time:	36 ns
Forward Transconductance - Min:	2.4 S
Product Type:	MOSFET
Rise Time:	54 ns
other:	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	64 ns
Typical Turn-On Delay Time:	40 ns