NTBG028N170M1

Manufacturer No:NTBG028N170M1

Manufacturer:onsemi

Type:MOSFET

Description:MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC 28 mohm 1700 V M1 D2PAK-7L

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:
Technology:	SiC
Mounting Style:	SMD/SMT
Package / Case:	D2PAK-7L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	71 A
Rds On - Drain-Source Resistance:	40 mOhms
Vgs - Gate-Source Voltage:	- 15 V + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	222 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	428 W
Channel Mode:	Enhancement
Series:	NTBG028N170M1
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	27 S
Product Type:	MOSFET
Rise Time:	18 ns
other:	800
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	121 ns
Typical Turn-On Delay Time:	47 ns