GAN190-650EBEZ

Manufacturer No:GAN190-650EBEZ

Manufacturer:Nexperia

Type:MOSFET

Description:MOSFET MOS DISCRETES

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Nexperia
Product Category:	MOSFET
RoHS:
Technology:	GaN
Mounting Style:	SMD/SMT
Package / Case:	DFN8080-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	11.5 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 7 V + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	2.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Nexperia
Configuration:	Single
Fall Time:	4 ns
Moisture Sensitive:	Yes
Product Type:	MOSFET
Rise Time:	4 ns
other:	2500
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	1.7 ns
Typical Turn-On Delay Time:	1.4 ns
Part # Aliases:	934665904332