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    • 2SA1941-O(Q)

      Manufacturer No:2SA1941-O(Q)

      Manufacturer:Toshiba

      Type:BJTs - Bipolar Transistors

      Description:Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Toshiba
    Product Category: Bipolar Transistors - BJT
    RoHS:  Details
    Mounting Style: Through Hole
    Transistor Polarity: PNP
    Configuration: Single
    Collector- Emitter Voltage VCEO Max: 140 V
    Collector- Base Voltage VCBO: 140 V
    Emitter- Base Voltage VEBO: 5 V
    Collector-Emitter Saturation Voltage: 800 mV
    Maximum DC Collector Current: 10 A
    Pd - Power Dissipation: 100 W
    Gain Bandwidth Product fT: 30 MHz
    Minimum Operating Temperature: -
    Maximum Operating Temperature: + 150 C
    Brand: Toshiba
    Continuous Collector Current: 10 A
    DC Collector/Base Gain hfe Min: 35
    DC Current Gain hFE Max: 83
    Product Type: BJTs - Bipolar Transistors
    other: 4000
    Subcategory: Transistors
    Technology: Si
    Unit Weight: 0.165788 oz

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