NTH4L040N120M3S

Manufacturer No:NTH4L040N120M3S

Manufacturer:onsemi

Type:MOSFET

Description:MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC 40 mohm 1200 V M3S TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC 40 mohm 1200 V M3S TO-247-4L

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package / Case:	TO-247-4L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs - Gate-Source Voltage:	- 10 V + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	329 W
Channel Mode:	Enhancement
Series:	NTH4L040N120M3S
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	13 S
Product Type:	MOSFET
Rise Time:	15 ns
other:	30
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	12 ns