Manufacturer No:IKQ120N65EH7XKSA1
Manufacturer:Infineon
Type:IGBT Transistors
Description:IGBT Transistors
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Product Attribute | Attribute Value |
---|---|
Manufacturer: | Infineon |
Product Category: | IGBT Transistors |
RoHS: | Details |
Technology: | Si |
Package / Case: | TO-247-3 |
Mounting Style: | Through Hole |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Maximum Gate Emitter Voltage: | - 20 V 20 V |
Continuous Collector Current at 25 C: | 160 A |
Pd - Power Dissipation: | 498 W |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 175 C |
Packaging: | Tube |
Brand: | Infineon Technologies |
Gate-Emitter Leakage Current: | 100 nA |
Product Type: | IGBT Transistors |
other: | 240 |
Subcategory: | IGBTs |
Part # Aliases: | IKQ120N65EH7 SP005588839 |
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2SA1941-O(Q)
Brand:Toshiba
Hong Kong: 852-26713361
Shen Zhen: 0755-21913499
Email:sales@sanxi-pro.com