SQSA82CENW-T1_GE3

Manufacturer No:SQSA82CENW-T1_GE3

Manufacturer:Vishay

Type:MOSFET

Description:MOSFET Automotive N-Channel 80V (D-S) 175C MOSFET W 90M SG

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAK1212-8W
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	90 MOhms
Vgs - Gate-Source Voltage:	- 20 V + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	6.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	27 W
Series:	SQSA82CENW
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Vishay Semiconductors
Fall Time:	3 ns
Forward Transconductance - Min:	14 S
Product Type:	MOSFET
Rise Time:	3ns
other:	3000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	7 ns