GAN3R2-100CBEAZ

Manufacturer No:GAN3R2-100CBEAZ

Manufacturer:Nexperia

Type:MOSFET

Description:MOSFET MOS DISCRETES

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Nexperia
Product Category:	MOSFET
RoHS:
Technology:	GaN
Mounting Style:	SMD/SMT
Package / Case:	WLCSP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	3.2 mOhms
Vgs - Gate-Source Voltage:	- 6 V + 6 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	12 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	394 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Nexperia
Configuration:	Single
Product Type:	MOSFET
other:	1500
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Part # Aliases:	934665899341