IPT022N10NF2SATMA1

Manufacturer No:IPT022N10NF2SATMA1

Manufacturer:Infineon

Type:MOSFET

Description:MOSFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	HSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	236 A
Rds On - Drain-Source Resistance:	2.25 mOhms
Vgs - Gate-Source Voltage:	- 20 V + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	103 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Series:	IPT022N10
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	26 ns
Forward Transconductance - Min:	110 S
Product Type:	MOSFET
Rise Time:	65 ns
other:	1800
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	47 ns
Typical Turn-On Delay Time:	20 ns
Part # Aliases:	IPT022N10NF2S SP005679731