SQJQ184E-T1_GE3

Manufacturer No:SQJQ184E-T1_GE3

Manufacturer:Vishay

Type:MOSFET

Description:MOSFET Automotive N-Channel 80 V (D-S) 175C MOSFET 1.4 mO 10V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAK8x8L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	430 A
Rds On - Drain-Source Resistance:	1.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V + 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	181 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	600 W
Series:	SQJQ184E
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Vishay Semiconductors
Fall Time:	20 ns
Forward Transconductance - Min:	82 S
Product Type:	MOSFET
Rise Time:	80 ns
other:	2000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	21 ns