IKY120N65EH7XKSA1

Manufacturer No:IKY120N65EH7XKSA1

Manufacturer:Infineon

Type:IGBT Modules

Description:IGBT Modules

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Continuous Collector Current at 25 C:	160 A
Gate-Emitter Leakage Current:	100 nA
Pd - Power Dissipation:	498 W
Package / Case:	TO-247-4
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Infineon Technologies
Maximum Gate Emitter Voltage:	- 20 V 20 V
Mounting Style:	Through Hole
Product Type:	IGBT Modules
other:	240
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	IKY120N65EH7 SP005588849