NTBG014N120M3P

Manufacturer No:NTBG014N120M3P

Manufacturer:onsemi

Type:MOSFET

Description:MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC 14 mohm 1200 V M3P D2PAK-7L

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:
Technology:	SiC
Mounting Style:	SMD/SMT
Package / Case:	D2PAK-7L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	104 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 10 V + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.63 V
Qg - Gate Charge:	337 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	454 W
Channel Mode:	Enhancement
Series:	NTBG014N120M3P
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	14 ns
Forward Transconductance - Min:	29 S
Product Type:	MOSFET
Rise Time:	40 ns
other:	800
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	74 ns
Typical Turn-On Delay Time:	24 ns