Manufacturer No:XPQR3004PB,LXHQ
Manufacturer:Toshiba
Type:MOSFET
Description:MOSFET 40V U-MOS IX-H L-TOGL 0.3mohm
RFQ
CLOSE
Product Attribute | Attribute Value |
---|---|
Manufacturer: | Toshiba |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | L-TOGL-9 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Id - Continuous Drain Current: | 400 A |
Rds On - Drain-Source Resistance: | 470 mOhms |
Vgs - Gate-Source Voltage: | - 20 V + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 295 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 750 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Toshiba |
Fall Time: | 130 ns |
Moisture Sensitive: | Yes |
Product Type: | MOSFET |
Rise Time: | 65 ns |
other: | 1500 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 395 ns |
Typical Turn-On Delay Time: | 120 ns |
IPTC039N15NM5ATMA1
Brand:Infineon Technologies
PSMNR82-30YLEX
Brand:Nexperia
FS200R12N3T4RB81BPSA1
Brand:Infineon Technologies
IQD020N10NM5CGATMA1
Brand:Infineon Technologies
NJVMJK31CTWG
Brand:onsemi
DMTH15H017LPSWQ-13
Brand:Diodes Incorporated
SH68N65DM6AG
Brand:STMicroelectronics
SIHB080N60E-GE3
Brand:Vishay Semiconductors
IPDQ65R017CFD7XTMA1
Brand:Infineon Technologies
PSMN4R5-80YSFX
Brand:Nexperia
Hong Kong: 852-26713361
Shen Zhen: 0755-21913499
Email:sales@sanxi-pro.com