IMYH200R012M1HXKSA1

Manufacturer No:IMYH200R012M1HXKSA1

Manufacturer:Infineon

Type:MOSFET

Description:MOSFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	2 kV
Id - Continuous Drain Current:	123 A
Rds On - Drain-Source Resistance:	16.5 mOhms
Vgs - Gate-Source Voltage:	- 10 V + 23 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	246 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	552 W
Channel Mode:	Enhancement
Tradename:	CoolSIC
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	24 ns
Forward Transconductance - Min:	30 S
Product Type:	MOSFET
Rise Time:	13 ns
other:	240
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	IMYH200R012M1H SP005427368