NTH4L020N090SC1

Manufacturer No:NTH4L020N090SC1

Manufacturer:onsemi

Type:MOSFET

Description:MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC 20 mohm 900 V M2 TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC 20 mohm 900 V M2 TO-247-4L

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package / Case:	TO-247-4L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	900 V
Id - Continuous Drain Current:	118 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 8 V + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	196 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	484 W
Channel Mode:	Enhancement
Series:	NTH4L020N090SC1
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Fall Time:	14 ns
Forward Transconductance - Min:	49 S
Product Type:	MOSFET
Rise Time:	28 ns
other:	30
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	54 ns