QPD1003

Manufacturer No:QPD1003

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	1.2 GHz to 1.4 GHz
Gain:	19.9 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Vgs - Gate-Source Breakdown Voltage:	145 V
Id - Continuous Drain Current:	15 A
Output Power:	540 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	370 W
Mounting Style:	SMD/SMT
Package / Case:	RF-565
Packaging:	Tray
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1003PCB401
Moisture Sensitive:	Yes
Operating Temperature Range:	- 40 C to + 85 C
Product Type:	RF JFET Transistors
Series:	QPD1003
other:	18
Subcategory:	Transistors
Vgs th - Gate-Source Threshold Voltage:	- 2.8 V
Part # Aliases:	1131389
Unit Weight:	3.691596 oz