NPT2022

Manufacturer No:NPT2022

Manufacturer:MACOM

Type:RF JFET Transistors

Description:RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	MACOM
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-Si
Operating Frequency:	2 GHz
Gain:	21 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	160 V
Vgs - Gate-Source Breakdown Voltage:	3 V
Id - Continuous Drain Current:	24 mA
Output Power:	100 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	Screw Mount
Packaging:	Tray
Brand:	MACOM
Configuration:	Single
Moisture Sensitive:	Yes
Operating Temperature Range:	- 40 C to + 85 C
Product Type:	RF JFET Transistors
Rds On - Drain-Source Resistance:	200 mOhms
other:	20
Subcategory:	Transistors
Vgs th - Gate-Source Threshold Voltage:	- 1.6 V
Unit Weight:	0.406091 oz