TGF2977-SM

Manufacturer No:TGF2977-SM

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	DC to 12 GHz
Gain:	13 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	32 V
Vgs - Gate-Source Breakdown Voltage:	- 2.7 V
Id - Continuous Drain Current:	326 mA
Output Power:	6 W
Maximum Operating Temperature:	+ 225 C
Pd - Power Dissipation:	8.4 W
Mounting Style:	SMD/SMT
Package / Case:	QFN-16
Packaging:	Tray
Brand:	Qorvo
Configuration:	Single
Development Kit:	TGF2977-SMEVB1
Height:	0.203 mm
Length:	3 mm
Moisture Sensitive:	Yes
Number of Channels:	1 Channel
Product Type:	RF JFET Transistors
Series:	TGF2977
other:	50
Subcategory:	Transistors
Type:	GaN SiC HEMT
Width:	3 mm
Part # Aliases:	1127257
Unit Weight:	0.002014 oz