BFR840L3RHESDE6327XTSA1

Manufacturer No:BFR840L3RHESDE6327XTSA1

Manufacturer:Infineon

Type:RF Bipolar Transistors

Description:RF Bipolar Transistors RF BIP TRANSISTORS

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFR840L3
Transistor Type:	Bipolar
Technology:	SiGe
Operating Frequency:	75 GHz
Collector- Emitter Voltage VCEO Max:	2.25 V
Emitter- Base Voltage VEBO:	2.9 V
Continuous Collector Current:	35 mA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Configuration:	Single
Mounting Style:	SMD/SMT
Package / Case:	TSLP-3
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Infineon Technologies
Pd - Power Dissipation:	75 mW
Product Type:	RF Bipolar Transistors
other:	15000
Subcategory:	Transistors
Type:	RF Silicon Germanium
Part # Aliases:	BFR 840L3RHESD E6327 SP000978848
Unit Weight:	0.000018 oz