MRFX600HR5

Manufacturer No:MRFX600HR5

Manufacturer:NXP

Type:RF MOSFET Transistors

Description:RF MOSFET Transistors Wideband RF Power LDMOS Transistor 600 W CW over 1.8-400 MHz 65 V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	NXP
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	32 A
Vds - Drain-Source Breakdown Voltage:	193 V
Rds On - Drain-Source Resistance:	-
Operating Frequency:	1.8 MHz to 400 MHz
Gain:	26.4 dB
Output Power:	600 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	Screw Mounts
Package / Case:	NI-780H-4L
Packaging:	Reel
Packaging:	Cut Tape
Brand:	NXP Semiconductors
Number of Channels:	2 Channel
Pd - Power Dissipation:	1.333 kW
Product Type:	RF MOSFET Transistors
Series:	MRFX600H
other:	50
Subcategory:	MOSFETs
Transistor Type:	LDMOS FET
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	- 6 V 10 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Part # Aliases:	935376369178
Unit Weight:	0.200697 oz