BFU550WF

Manufacturer No:BFU550WF

Manufacturer:NXP

Type:RF Bipolar Transistors

Description:RF Bipolar Transistors NPN wideband silicon RF transistor

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	NXP
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFU550W
Transistor Type:	Bipolar Wideband
Technology:	Si
Transistor Polarity:	NPN
Operating Frequency:	900 MHz
DC Collector/Base Gain hfe Min:	60
Collector- Emitter Voltage VCEO Max:	16 V
Emitter- Base Voltage VEBO:	2 V
Continuous Collector Current:	15 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Configuration:	Single
Mounting Style:	SMD/SMT
Package / Case:	SOT323-3
Packaging:	Reel
Packaging:	Cut Tape
Brand:	NXP Semiconductors
Collector- Base Voltage VCBO:	24 V
DC Current Gain hFE Max:	200
Gain Bandwidth Product fT:	11 GHz
Height:	1.1 mm
Length:	2.2 mm
Maximum DC Collector Current:	80 mA
Operating Temperature Range:	- 40 C to + 150 C
Output Power:	13.5 dBm
Pd - Power Dissipation:	450 mW
Product Type:	RF Bipolar Transistors
other:	10000
Subcategory:	Transistors
Type:	Wideband RF Transistor
Width:	1.35 mm
Part # Aliases:	934067695135
Unit Weight:	0.000196 oz