Manufacturer No:IPDQ60R020CFD7XTMA1
Manufacturer:Infineon
Type:MOSFET
Description:MOSFET
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| Product Attribute | Attribute Value |
|---|---|
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | HDSOP-22 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 112 A |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Qg - Gate Charge: | 186 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 543 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 5 ns |
| Product Type: | MOSFET |
| Rise Time: | 10 ns |
| other: | 750 |
| Subcategory: | MOSFETs |
| Typical Turn-Off Delay Time: | 155 ns |
| Typical Turn-On Delay Time: | 53 ns |
| Part # Aliases: | IPDQ60R020CFD7 SP005419685 |
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Hong Kong: 852-26713361
Shen Zhen: 0755-21913499
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