PSMN1R9-80SSEJ

Manufacturer No:PSMN1R9-80SSEJ

Manufacturer:Nexperia

Type:MOSFET

Description:MOSFET MOS DISCRETES

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Nexperia
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-1235-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	286 A
Rds On - Drain-Source Resistance:	1.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V + 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	155 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	340 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Nexperia
Configuration:	Single
Fall Time:	46 ns
Product Type:	MOSFET
Rise Time:	42 ns
other:	2000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	79 ns
Typical Turn-On Delay Time:	46 ns
Part # Aliases:	934662574118