IQDH88N06LM5CGATMA1

Manufacturer No:IQDH88N06LM5CGATMA1

Manufacturer:Infineon

Type:MOSFET

Description:MOSFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TTFN-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	447 A
Rds On - Drain-Source Resistance:	860 uOhms
Vgs - Gate-Source Voltage:	- 10 V + 10 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	76 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	333 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Fall Time:	16 ns
Forward Transconductance - Min:	115 S
Product Type:	MOSFET
Rise Time:	8 ns
other:	5000
Subcategory:	MOSFETs
Transistor Type:	1-N-Channel
Typical Turn-Off Delay Time:	53 ns
Typical Turn-On Delay Time:	14 ns
Part # Aliases:	IQDH88N06LM5CG SP005588830