SI2392BDS-T1-GE3

Manufacturer No:SI2392BDS-T1-GE3

Manufacturer:Vishay

Type:MOSFET

Description:MOSFET N-Channel 100-V (D-S) MOSFET SOT-23 149 mohm a. 10V 180 mohm a. 4.5V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	2.3 A
Rds On - Drain-Source Resistance:	180 mOhms
Vgs - Gate-Source Voltage:	- 20 V + 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	4.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.7 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	12 S
Product Type:	MOSFET
Rise Time:	15 ns
other:	3000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	15 ns