IQE065N10NM5SCATMA1

Manufacturer No:IQE065N10NM5SCATMA1

Manufacturer:Infineon

Type:MOSFET

Description:MOSFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	WHSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	13 A
Rds On - Drain-Source Resistance:	6.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V + 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Fall Time:	7.5 ns
Forward Transconductance - Min:	55 S
Product Type:	MOSFET
Rise Time:	3.8 ns
other:	6000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21.1 ns
Typical Turn-On Delay Time:	8.9 ns
Part # Aliases:	IQE065N10NM5SC SP005559080