NTMT045N065SC1

Manufacturer No:NTMT045N065SC1

Manufacturer:onsemi

Type:MOSFET

Description:MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC 33 mohm 650 V M2 Power88

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:
Technology:	SiC
Mounting Style:	SMD/SMT
Package / Case:	TDFN-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 8 V + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	187 W
Channel Mode:	Enhancement
Series:	NTMT045N065SC1
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	16 S
Product Type:	MOSFET
Rise Time:	14 ns
other:	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	13 ns