NVH4L040N120M3S

Manufacturer No:NVH4L040N120M3S

Manufacturer:onsemi

Type:MOSFET

Description:MOSFET Silicon Carbide (SiC) MOSFET- EliteSiC 40 mohm 1200 V M3S TO247-4L SiC MOSFET 1200 V 40 mohm M3S Series in TO247-4LD package

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package / Case:	TO-247-4L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	44 A
Rds On - Drain-Source Resistance:	40.8 mOhms
Vgs - Gate-Source Voltage:	- 8 V + 22 V
Vgs th - Gate-Source Threshold Voltage:	3.22 V
Qg - Gate Charge:	75.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	235 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Fall Time:	5.94 ns
Forward Transconductance - Min:	18.7 S
Product Type:	MOSFET
Rise Time:	4.78 ns
other:	30
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	26.5 ns
Typical Turn-On Delay Time:	13.8 ns