SISHA18ADN-T1-GE3

Manufacturer No:SISHA18ADN-T1-GE3

Manufacturer:Vishay

Type:MOSFET

Description:MOSFET N-Channel 30 V (D-S) MOSFET SH 4.6 mO 10V 7 mO 4.5V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	PowerPAK1212-8SH
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	4.6 mOhms 7 mOhms
Vgs - Gate-Source Voltage:	- 16 V + 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V 2.5 V
Qg - Gate Charge:	9.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	26.5 W
Series:	SiSHA18ADN
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Vishay Semiconductors
Fall Time:	5 ns
Forward Transconductance - Min:	48 S
Product Type:	MOSFET
Rise Time:	5 ns
other:	3000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	8 ns