IQDH29NE2LM5CGATMA1

Manufacturer No:IQDH29NE2LM5CGATMA1

Manufacturer:Infineon

Type:MOSFET

Description:MOSFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	TTFN-9
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	789 A
Rds On - Drain-Source Resistance:	290 uOhms
Vgs - Gate-Source Voltage:	- 16 V + 16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	88 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	333 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Series:	OptiMOS 5
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	19 ns
Product Type:	MOSFET
Rise Time:	6 ns
other:	5000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	77 ns
Typical Turn-On Delay Time:	14 ns
Part # Aliases:	IQDH29NE2LM5CG SP005408851