SCT055HU65G3AG

Manufacturer No:SCT055HU65G3AG

Manufacturer:STMicroelectronics

Type:MOSFET

Description:MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 58 mOhm typ. 30 A

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	STMicroelectronics
Product Category:	MOSFET
RoHS:
Technology:	SiC
Mounting Style:	SMD/SMT
Package / Case:	HU3PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	72 mOhms
Vgs - Gate-Source Voltage:	- 10 V + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	185 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	STMicroelectronics
Fall Time:	12.1 ns
Product Type:	MOSFET
Rise Time:	7.9 ns
other:	600
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	14.2 ns
Typical Turn-On Delay Time:	9.2 ns
Unit Weight:	0.081836 oz