F3L225R12W3H3B11BPSA1

Manufacturer No:F3L225R12W3H3B11BPSA1

Manufacturer:Infineon

Type:IGBT Modules

Description:IGBT Modules

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:
Product:	IGBT Silicon Modules
Configuration:	Half Bridge
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.55 V
Continuous Collector Current at 25 C:	175 A
Gate-Emitter Leakage Current:	100 nA
Pd - Power Dissipation:	20 mW
Package / Case:	EasyPACK
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Tray
Brand:	Infineon Technologies
Mounting Style:	Screw Mount
Product Type:	IGBT Modules
other:	8
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	F3L225R12W3H3_B11 SP005675779