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      • F3L225R12W3H3B11BPSA1

      Manufacturer No:F3L225R12W3H3B11BPSA1

      Manufacturer:Infineon

      Type:IGBT Modules

      Description:IGBT Modules

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Infineon
    Product Category: IGBT Modules
    RoHS:  Details
    Product: IGBT Silicon Modules
    Configuration: Half Bridge
    Collector- Emitter Voltage VCEO Max: 1.2 kV
    Collector-Emitter Saturation Voltage: 2.55 V
    Continuous Collector Current at 25 C: 175 A
    Gate-Emitter Leakage Current: 100 nA
    Pd - Power Dissipation: 20 mW
    Package / Case: EasyPACK
    Minimum Operating Temperature: - 40 C
    Maximum Operating Temperature: + 125 C
    Packaging: Tray
    Brand: Infineon Technologies
    Mounting Style: Screw Mount
    Product Type: IGBT Modules
    other: 8
    Subcategory: IGBTs
    Technology: Si
    Part # Aliases: F3L225R12W3H3_B11 SP005675779

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