IQE030N06NM5CGSCATMA1

Manufacturer No:IQE030N06NM5CGSCATMA1

Manufacturer:Infineon

Type:MOSFET

Description:MOSFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	WHTFN-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	21 A
Rds On - Drain-Source Resistance:	3 mOhms
Vgs - Gate-Source Voltage:	- 20 V + 20 V
Vgs th - Gate-Source Threshold Voltage:	3.3 V
Qg - Gate Charge:	49 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Fall Time:	5.7 ns
Forward Transconductance - Min:	66 S
Product Type:	MOSFET
Rise Time:	5.7 ns
other:	6000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18.8 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	IQE030N06NM5CGSC SP005559068