MRFX1K80HR5

Manufacturer No:MRFX1K80HR5

Manufacturer:NXP

Type:RF MOSFET Transistors

Description:RF MOSFET Transistors 65V LDMOS Transistor

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	NXP
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	Dual N-Channel
Technology:	Si
Id - Continuous Drain Current:	43 A
Vds - Drain-Source Breakdown Voltage:	- 500 mV 179 V
Rds On - Drain-Source Resistance:	-
Operating Frequency:	1.8 MHz to 400 MHz
Gain:	25.1 dB
Output Power:	1.8 kW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package / Case:	NI-1230H-4
Packaging:	Reel
Packaging:	Cut Tape
Brand:	NXP Semiconductors
Forward Transconductance - Min:	44.7 S
Number of Channels:	2 Channel
Pd - Power Dissipation:	2.247 kW
Product Type:	RF MOSFET Transistors
Series:	MRFX1K80H
other:	50
Subcategory:	MOSFETs
Transistor Type:	LDMOS FET
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	- 6 V 10 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Part # Aliases:	935351859178
Unit Weight:	0.464156 oz