BFU630F,115

Manufacturer No:BFU630F,115

Manufacturer:NXP

Type:RF Bipolar Transistors

Description:RF Bipolar Transistors Single NPN 21GHz

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	NXP
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFU630F
Transistor Type:	Bipolar
Technology:	Si
Transistor Polarity:	NPN
DC Collector/Base Gain hfe Min:	90
Collector- Emitter Voltage VCEO Max:	5.5 V
Emitter- Base Voltage VEBO:	2.5 V
Continuous Collector Current:	3 mA
Maximum Operating Temperature:	+ 150 C
Configuration:	Single
Mounting Style:	SMD/SMT
Package / Case:	SOT-343F
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	NXP Semiconductors
Gain Bandwidth Product fT:	21 GHz
Pd - Power Dissipation:	200 mW
Product Type:	RF Bipolar Transistors
other:	3000
Subcategory:	Transistors
Type:	RF Bipolar Small Signal
Part # Aliases:	934064609115
Unit Weight:	0.000235 oz