QPD1000

Manufacturer No:QPD1000

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	30 MHz to 1.215 GHz
Gain:	19 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	28 V
Vgs - Gate-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	817 mA
Output Power:	24 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	28.8 W
Mounting Style:	SMD/SMT
Package / Case:	QFN-8
Packaging:	Tray
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1000PCB401 QPD1000PCB402
Moisture Sensitive:	Yes
Operating Temperature Range:	- 40 C to + 85 C
Product Type:	RF JFET Transistors
Series:	QPD1000
other:	750
Subcategory:	Transistors
Vgs th - Gate-Source Threshold Voltage:	- 2.8 V
Part # Aliases:	QPD1000TR7
Unit Weight:	0.258417 oz