BFP 740F H6327

Manufacturer No:BFP 740F H6327

Manufacturer:Infineon

Type:RF Bipolar Transistors

Description:RF Bipolar Transistors RF BIP TRANSISTOR

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFP740
Transistor Type:	Bipolar
Technology:	SiGe
Operating Frequency:	42 GHz
Collector- Emitter Voltage VCEO Max:	4 V
Emitter- Base Voltage VEBO:	1.2 V
Continuous Collector Current:	30 mA
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package / Case:	TSFP-4
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Infineon Technologies
Collector- Base Voltage VCBO:	13 V
DC Current Gain hFE Max:	400
Height:	0.55 mm
Length:	1.4 mm
Pd - Power Dissipation:	160 mW
Product Type:	RF Bipolar Transistors
other:	3000
Subcategory:	Transistors
Type:	RF Silicon Germanium
Width:	0.8 mm
Part # Aliases:	SP000750416 BFP74FH6327XT BFP740FH6327XTSA1
Unit Weight:	0.000066 oz