T2G6000528-Q3

Manufacturer No:T2G6000528-Q3

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	DC to 6 GHz
Gain:	15 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	-
Vgs - Gate-Source Breakdown Voltage:	-
Id - Continuous Drain Current:	650 mA
Output Power:	10 W
Maximum Drain Gate Voltage:	-
Pd - Power Dissipation:	12.5 W
Mounting Style:	SMD/SMT
Package / Case:	NI-200
Packaging:	Tray
Application:	Military Radar Professional and Military Radio Communications
Brand:	Qorvo
Configuration:	Single
Development Kit:	T2G6000528-Q3-EVB1 T2G6000528-Q3-EVB3 T2G6000528-Q3-EVB5
Forward Transconductance - Min:	-
Moisture Sensitive:	Yes
Product Type:	RF JFET Transistors
Series:	T2G6000528
other:	100
Subcategory:	Transistors
Part # Aliases:	T2G6000528 1099997
Unit Weight:	0.260886 oz