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    • T2G6000528-Q3

      Manufacturer No:T2G6000528-Q3

      Manufacturer:Qorvo

      Type:RF JFET Transistors

      Description:RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Qorvo
    Product Category: RF JFET Transistors
    RoHS:  Details
    Transistor Type: HEMT
    Technology: GaN-on-SiC
    Operating Frequency: DC to 6 GHz
    Gain: 15 dB
    Transistor Polarity: N-Channel
    Vds - Drain-Source Breakdown Voltage: -
    Vgs - Gate-Source Breakdown Voltage: -
    Id - Continuous Drain Current: 650 mA
    Output Power: 10 W
    Maximum Drain Gate Voltage: -
    Pd - Power Dissipation: 12.5 W
    Mounting Style: SMD/SMT
    Package / Case: NI-200
    Packaging: Tray
    Application: Military Radar Professional and Military Radio Communications
    Brand: Qorvo
    Configuration: Single
    Development Kit: T2G6000528-Q3-EVB1 T2G6000528-Q3-EVB3 T2G6000528-Q3-EVB5
    Forward Transconductance - Min: -
    Moisture Sensitive: Yes
    Product Type: RF JFET Transistors
    Series: T2G6000528
    other: 100
    Subcategory: Transistors
    Part # Aliases: T2G6000528 1099997
    Unit Weight: 0.260886 oz

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