Manufacturer No:T2G6000528-Q3
Manufacturer:Qorvo
Type:RF JFET Transistors
Description:RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
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Product Attribute | Attribute Value |
---|---|
Manufacturer: | Qorvo |
Product Category: | RF JFET Transistors |
RoHS: | Details |
Transistor Type: | HEMT |
Technology: | GaN-on-SiC |
Operating Frequency: | DC to 6 GHz |
Gain: | 15 dB |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | - |
Vgs - Gate-Source Breakdown Voltage: | - |
Id - Continuous Drain Current: | 650 mA |
Output Power: | 10 W |
Maximum Drain Gate Voltage: | - |
Pd - Power Dissipation: | 12.5 W |
Mounting Style: | SMD/SMT |
Package / Case: | NI-200 |
Packaging: | Tray |
Application: | Military Radar Professional and Military Radio Communications |
Brand: | Qorvo |
Configuration: | Single |
Development Kit: | T2G6000528-Q3-EVB1 T2G6000528-Q3-EVB3 T2G6000528-Q3-EVB5 |
Forward Transconductance - Min: | - |
Moisture Sensitive: | Yes |
Product Type: | RF JFET Transistors |
Series: | T2G6000528 |
other: | 100 |
Subcategory: | Transistors |
Part # Aliases: | T2G6000528 1099997 |
Unit Weight: | 0.260886 oz |
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