QPD1025

Manufacturer No:QPD1025

Manufacturer:Qorvo

Type:RF MOSFET Transistors

Description:RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	Dual N-Channel
Technology:	GaN-on-SiC
Id - Continuous Drain Current:	28 A
Vds - Drain-Source Breakdown Voltage:	65 V
Rds On - Drain-Source Resistance:	-
Operating Frequency:	1 GHz to 1.1 GHz
Gain:	22.5 dB
Output Power:	1.862 kW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	Flange Mount
Package / Case:	NI-1230-4
Packaging:	Tray
Brand:	Qorvo
Moisture Sensitive:	Yes
Number of Channels:	2 Channel
Pd - Power Dissipation:	685 W
Product Type:	RF MOSFET Transistors
Series:	QPD1025
other:	18
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	- 2.8 V