HFA3127RZ

Manufacturer No:HFA3127RZ

Manufacturer:Renesas Electronics

Type:RF Bipolar Transistors

Description:RF Bipolar Transistors W/ANNEAL TXARRAY 5X NPN 16LD 3X3

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Renesas Electronics
Product Category:	RF Bipolar Transistors
RoHS:
Series:	HFA3127
Transistor Type:	Bipolar
Technology:	Si
Transistor Polarity:	NPN
Operating Frequency:	8 GHz
DC Collector/Base Gain hfe Min:	40
Collector- Emitter Voltage VCEO Max:	8 V
Emitter- Base Voltage VEBO:	5.5 V
Continuous Collector Current:	65 mA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 125 C
Configuration:	Quint
Package / Case:	QFN EP
Packaging:	Tube
Brand:	Renesas / Intersil
Collector- Base Voltage VCBO:	12 V
DC Current Gain hFE Max:	40 at 10 mA at 2 V
Gain Bandwidth Product fT:	8000 MHz (Typ)
Height:	0.9 mm
Length:	3 mm
Maximum DC Collector Current:	65 mA
Moisture Sensitive:	Yes
Pd - Power Dissipation:	150 mW
Product Type:	RF Bipolar Transistors
other:	100
Subcategory:	Transistors
Type:	RF Bipolar Small Signal
Width:	3 mm
Unit Weight:	0.000847 oz