A5G35H055NT4

Manufacturer No:A5G35H055NT4

Manufacturer:NXP

Type:RF MOSFET Transistors

Description:RF MOSFET Transistors Airfast RF Power GaN Transistor 3400 3600 MHz 7.6 W Avg. 48 V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	NXP
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	Dual N-Channel
Technology:	GaN Si
Id - Continuous Drain Current:	3.8 mA
Vds - Drain-Source Breakdown Voltage:	125 V
Rds On - Drain-Source Resistance:	-
Operating Frequency:	3.4 GHz to 3.6 GHz
Gain:	13.5 dB
Output Power:	7.6 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package / Case:	DFN-6
Packaging:	Reel
Packaging:	Cut Tape
Brand:	NXP Semiconductors
Moisture Sensitive:	Yes
Number of Channels:	2 Channel
Product Type:	RF MOSFET Transistors
Series:	A5G35H055N
other:	2500
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	- 8 V
Vgs th - Gate-Source Threshold Voltage:	- 3.5 V
Part # Aliases:	935417638528