• One-stop ElectronicL Components Service Platform
  • 中文介绍
  • Contact Us  ▼
  • Brand Category

  • HOME > Products > Discrete Semiconductors > Transistors
    • FF600R12KE7EHPSA1

      Manufacturer No:FF600R12KE7EHPSA1

      Manufacturer:Infineon

      Type:IGBT Modules

      Description:IGBT Modules

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Infineon
    Product Category: IGBT Modules
    RoHS:  Details
    Product: IGBT Silicon Modules
    Configuration: Dual
    Collector- Emitter Voltage VCEO Max: 1.2 kV
    Collector-Emitter Saturation Voltage: 1.75 V
    Gate-Emitter Leakage Current: 100 nA
    Minimum Operating Temperature: - 40 C
    Maximum Operating Temperature: + 175 C
    Packaging: Tray
    Brand: Infineon Technologies
    Maximum Gate Emitter Voltage: 20 V
    Mounting Style: Chassis Mount
    Product Type: IGBT Modules
    other: 10
    Subcategory: IGBTs
    Technology: Si
    Tradename: TRENCHSTOP
    Part # Aliases: FF600R12KE7_E SP005568704

    HOT

  • SIHB080N60E-GE3
    Brand:Vishay Semiconductors

  • SCT055HU65G3AG
    Brand:STMicroelectronics

  • SISHA06DN-T1-GE3
    Brand:Vishay Semiconductors

  • IMYH200R012M1HXKSA1
    Brand:Infineon Technologies

  • SQ4840CEY-T1_GE3
    Brand:Vishay Semiconductors

  • IPTC044N15NM5ATMA1
    Brand:Infineon Technologies

  • 2SA1941-O(Q)
    Brand:Toshiba

  • IPDQ60R022S7AXTMA1
    Brand:Infineon Technologies

  • SISHA18ADN-T1-GE3
    Brand:Vishay Semiconductors

  • SQSA84CENW-T1_GE3
    Brand:Vishay Semiconductors