QPD1010

Manufacturer No:QPD1010

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	4 GHz
Gain:	24.7 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Vgs - Gate-Source Breakdown Voltage:	145 V
Id - Continuous Drain Current:	400 mA
Output Power:	11 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	13.5 W
Mounting Style:	SMD/SMT
Package / Case:	QFN-16
Packaging:	Waffle
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1010-EVB1
Moisture Sensitive:	Yes
Operating Temperature Range:	- 40 C to + 85 C
Product Type:	RF JFET Transistors
Series:	QPD1010
other:	50
Subcategory:	Transistors
Vgs th - Gate-Source Threshold Voltage:	- 2.8 V
Part # Aliases:	1132873
Unit Weight:	0.081130 oz