QPD1016

Manufacturer No:QPD1016

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	DC to 1.7 GHz
Gain:	23.9 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	145 V
Vgs - Gate-Source Breakdown Voltage:	- 7 V to 1.5 V
Id - Continuous Drain Current:	70 A
Output Power:	680 W
Maximum Drain Gate Voltage:	55 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	714 W
Mounting Style:	SMD/SMT
Package / Case:	NI780-2
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1016EVB01
Moisture Sensitive:	Yes
Product Type:	RF JFET Transistors
Series:	QPD1016
other:	25
Subcategory:	Transistors