BFS 483 H6327

Manufacturer No:BFS 483 H6327

Manufacturer:Infineon

Type:RF Bipolar Transistors

Description:RF Bipolar Transistors RF BIP TRANSISTOR

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFS483
Transistor Type:	Bipolar
Technology:	Si
Transistor Polarity:	NPN
Operating Frequency:	8 GHz
DC Collector/Base Gain hfe Min:	70
Collector- Emitter Voltage VCEO Max:	12 V
Emitter- Base Voltage VEBO:	2 V
Continuous Collector Current:	65 mA
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-363
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Infineon Technologies
Maximum DC Collector Current:	65 mA
Pd - Power Dissipation:	450 mW
Product Type:	RF Bipolar Transistors
other:	3000
Subcategory:	Transistors
Type:	RF Bipolar Small Signal
Part # Aliases:	BFS483H6327XT SP000750464 BFS483H6327XTSA1
Unit Weight:	0.000212 oz