RF2L16180CB4

Manufacturer No:RF2L16180CB4

Manufacturer:STMicroelectronics

Type:RF MOSFET Transistors

Description:RF MOSFET Transistors 180 W 28 V 1.3 to 1.6 GHz RF power LDMOS transistor

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	STMicroelectronics
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	2.5 A
Vds - Drain-Source Breakdown Voltage:	65 V
Rds On - Drain-Source Resistance:	1 Ohms
Operating Frequency:	1.6 GHz
Gain:	14 dB
Output Power:	180 W
Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 200 C
Mounting Style:	SMD/SMT
Package / Case:	B4E-5
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	STMicroelectronics
Number of Channels:	1 Channel
Product Type:	RF MOSFET Transistors
other:	120
Subcategory:	MOSFETs
Transistor Type:	LDMOS FET
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	10 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Unit Weight:	0.141096 oz