HFA3101BZ

Manufacturer No:HFA3101BZ

Manufacturer:Renesas Electronics

Type:RF Bipolar Transistors

Description:RF Bipolar Transistors TXARRAY NPN GILBERT CELL 8W

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Renesas Electronics
Product Category:	RF Bipolar Transistors
RoHS:
Series:	HFA3101
Transistor Type:	Bipolar
Technology:	Si
Transistor Polarity:	NPN
Operating Frequency:	10 GHz
DC Collector/Base Gain hfe Min:	40
Collector- Emitter Voltage VCEO Max:	8 V
Emitter- Base Voltage VEBO:	5.5 V
Continuous Collector Current:	30 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Configuration:	Hex
Mounting Style:	SMD/SMT
Package / Case:	SOIC-8
Packaging:	Tube
Brand:	Renesas / Intersil
Collector- Base Voltage VCBO:	12 V
DC Current Gain hFE Max:	40 at 10 mA at 3 V
Gain Bandwidth Product fT:	10000 MHz (Typ)
Height:	0 mm
Length:	4.9 mm
Maximum DC Collector Current:	30 mA
Product Type:	RF Bipolar Transistors
other:	980
Subcategory:	Transistors
Type:	RF Bipolar Small Signal
Width:	3.9 mm
Unit Weight:	0.002540 oz