QPD1006

Manufacturer No:QPD1006

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors 450W 50V 1.2-1.4GHz GaN IMFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	1.2 GHz to 1.4 GHz
Gain:	17.8 dB
Transistor Polarity:	N-Channel
Id - Continuous Drain Current:	14 A
Output Power:	450 W
Maximum Drain Gate Voltage:	145 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	445 W
Mounting Style:	SMD/SMT
Package / Case:	NI-50CW
Application:	Civilian and Military Radar
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1006EVB3
Moisture Sensitive:	Yes
Product Type:	RF JFET Transistors
Series:	QPD1006
other:	36
Subcategory:	Transistors